731 West Dickson Street Fayetteville, AR 72701 (479) 575-3175microep@uark.edu
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Student: Maxwell L. Merget
Major Professor: Dr. Alan Mantooth
Research Area(s): Microelectronics
Silicon carbide has been found to be an efficient material for manufacturing high temp, high voltage Power MOSFETs.
Recently a low-voltage SiC gate driver has been developed to work laterally and be integrated into the power device process.
Use SiC to manufacture power device and gate driver on a single die to increase performance and reduce cost.
Design protection circuitry to also be integrated into a single die design to ensure proper and continuous functionality.